1. Imveliso engundoqo
Phezulu-Iteyiphu yeGrafite ephucukileyo yicoil yegraphite ebhetyebhetye eyenziwe ukusuka kuma-99% aphezulu{2}}obusulungekileyo obunokwandisa igraphite, engenazibophelelo kunye nokungcola okubolayo. Igcina i-thermal conductivity egqwesileyo, ukuhanjiswa kombane, kunye -nobushushu obuphezulu bokuxhathisa kwibhloko{5}}emile phezulu{6}}igraphite ecocekileyo, ngelixa inezinto ezigqwesileyo ezigqwesileyo, ukomelela koxinzelelo, kunye nokucutshungulwa ngokulula. Ingazalisa izithuba ezingaqhelekanga kumphezulu, zenze ujongano olusebenzayo lolawulo lwe-thermal kunye nezitywina ezithembekileyo ezingenamoya.
2. IiNgcaciso zobuGcisa
|
Izinto zeParameter |
IiNkcazelo eziqhelekileyo/uluhlu |
Imigangatho yoVavanyo |
|
Ukuqulunqwa kwemichiza |
||
|
Umxholo wekhabhoni (C) |
Enkulu kuno okanye ilingana no 99.0%~99.9% |
I-ASTM D5603 |
|
Umxholo wothuthu |
Ngaphantsi okanye ilingana no 1000 ppm ~ 100 ppm |
- |
|
Umxholo wesulfure (S) |
Ngaphantsi okanye ilingana no 500 ppm |
- |
|
Iipropati Zomzimba |
||
|
Ukutyeba |
0.1 mm~3.0 mm (inokwenziwa ngokwezifiso) |
I-ASTM F152 |
|
Ukuxinana |
1.0~1.3 g/cm³ (iyalungiseka) |
I-ASTM F1315 |
|
Iipropati zoThermal |
||
|
{0}}ixesha elide lobushushu benkonzo (emoyeni) |
-200 isidanga ~450 isidanga (kwimeko oxidizing) |
- |
|
{0}}ixesha elide lobushushu benkonzo (inert/vacuum) |
Ukuya kuthi ga kwi-3000 degree |
- |
|
Kwi-inqwelomoya ye-thermal conductivity (X-Y indlela) |
80~150 W/(m·K) |
I-ASTM E1461 |
|
Iipropati zoomatshini |
||
|
Tensile strength |
Inkulu kuno okanye ilingana ne 4.0 MPa |
I-ASTM D828 |
|
Umlinganiselo woxinzelelo |
15%~40% |
I-ASTM F36 |
|
Ireyithi yokubuyela kwakhona |
Inkulu kuno okanye ilingana ne 15% |
I-ASTM F36 |
3.Iimpawu eziphambili kunye nezinto eziluncedo
I-conductivity ephezulu ye-thermal kunye nokuzinza kwe-thermal
Inokuhanjiswa kwe-thermal okugqwesileyo ecaleni kwendlela yenqwelomoya (ukuya kwi-150 W/(m·K) okanye ngaphezulu), eyenza usasazo lobushushu olukhawulezayo nolufanayo ukunqanda ukufudumeza kwendawo.
Ingasebenza ngokuzinzileyo ixesha elide kwi- -i-200℃ukuya kwi-3000℃kwi-inert gas okanye i-vacuum bume (imeko-bume engeyiyo i-oxidizing), kunye ne-coefficient yokwandisa i-thermal ephantsi kakhulu kunye nozinzo olubalaseleyo lwe-dimensional.
Ukuguquguquka okugqwesileyo kunye nembuyekezo
Ubume obuthambileyo, kulula ukugoba kunye nokusonga, kwaye inokulingana ngokugqibeleleyo iigophe ezahlukeneyo kunye nemigangatho engalinganiyo.
Inokuqina koxinzelelo olulungileyo, olunokuthi lubuyekeze ngokufanelekileyo izithuba ezibangelwe kukwandiswa kwe-thermal, ukucutheka, okanye ukunyamezelwa kwe-machining kumphezulu woqhagamshelwano, ukugcina uxinzelelo lwexesha elide oluzinzileyo loqhagamshelwano.
Ukucoceka okuphezulu kunye nokungangeni kweekhemikhali
Isiqulatho sothuthu esiphantsi kakhulu (sinokuba ngaphantsi kwe-100ppm), asinazo ii-ion ezidlayo ezifana neklorin kunye nesalfure, kwaye aziyi kubangela ukuhlwa okanye ungcoliseko kwizinto ezinovakalelo ze-elektroniki (umzekelo, izixhobo ze-semiconductor) okanye amagumbi esinyithi.
Kulula ukusetyenzwa kunye nokusetyenziswa
Inokunqunyulwa ngokulula kwaye igximfizwe ngezandla okanye izixhobo njengoko kufuneka.
Ngesiqhelo iza nencangathi encamathelayo okanye ingasetyenziswa{0}}nobushushu obuphezulu bokuncamathelisa, iququzelela ufakelo kunye nokuphucula ukusebenza kakuhle kwemveliso.
Ukungangeni moya okugqwesileyo
Ngaphantsi koxinzelelo olwaneleyo, inokwenza umqobo wokutywina osebenzayo ukuthintela ukuvuza kwerhasi kunye nolwelo.
4. IiNdawo zokuSebenza eziQhelekileyo
Vacuum furnaces kunye{0}}neziko lobushushu obuphezulu: Phezulu{0}Ubunyulu beTape yeGraphite isetyenziselwa ukutywina okuguquguqukayo okanye okumileyo{1}}kobushushu obuphezulu kwiingcango zesithando somlilo, iifestile zokuphonononga, iindawo zokukhupha i-electrode, njl.
Izixhobo zokuvelisa iSemiconductor: Isetyenziswe njengokutywinwa kwe-flange kunye nezixhobo zokufakelwa kwe-CVD, i-PECVD, ii-diffusion furnaces, kunye nezinye izixhobo.
Iiseli zamafutha: Isetyenziswa njengerhasi yokutywina phakathi kweepleyiti zegraphite bipolar okanye iipleyiti zentsimbi zebipolar.
Ukutshatyalaliswa kobushushu bombane kunye nombane: Incamatheliswe phakathi kwezixhobo zamandla (umzekelo, IGBT, CPU) kunye neesinki zobushushu njengephedi esebenzayo yobushushu.
Ukukhula kwe-Photovoltaic kunye nekristale: Isetyenziselwa ukutywinwa kwentsimi ye-thermal kunye nokugquma kwi-monocrystalline silicon yokuzoba iifurnaces kunye ne-polycrystalline silicon ingot furnaces.
I-Aerospace kunye nophando lwenzululwaziIfakelwa ukutywinwa kunye ne-thermal conductivity kwiindawo ezahlukeneyo ezigqithisileyo ezifana ne-vacuum, uxinzelelo oluphezulu, kunye nobushushu obuphezulu.
Iifayile ezishisayo: phezulu-esulungekileyo tape yegraphite, iChina ephezulu-abavelisi beteyiphu esulungekileyo yegraphite
