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Ukuchaneka-I-Machined Graphite Plate yimveliso yegraphite eyenziwe ngomatshini obuchanekileyo obuphezulu, enokunyamezelana okungqongqo, umphezulu ogudileyo kunye neemilo zejiyometri ezintsonkothileyo. Idibanisa iipropathi ezigqwesileyo zegraphite kunye nobuchwephesha bokuchaneka komatshini, kwaye isetyenziswa kakhulu kwiindawo zoshishino ezichanekileyo.

Iindawo ezingundoqo zesicelo

1. Semiconductor/pv ishishini

Ukwenziwa kwe-wafer: ikomityi yokufunxa i-electrostatic, i-diffusion components, i-CVD ephethe ipleyiti.
Iiseli ze-Photovoltaic: Isikhephe se-PECVD segraphite, i-silicon wafer sintering mold.
LED epitaxy: MOCVD graphite substrate.

2. I-Electron beam processing -- izinto ze-electrode: igraphite ecocekileyo, esetyenziselwa ukulungiswa kwe-mold ngokuchanekileyo.

3. Isithando somlilo soShishino / izixhobo zobushushu obuphezulu -- amacandelo entsimi ye-crystal eyodwa ye-thermal, i-graphite fixture ye-vacuum sintering furnace, isikhokelo sikaloliwe.

4. Iseli ye-fuel / amandla amatsha -- I-Fuel cell bipolar plate, i-lithium anode material sintering mold.

5. Izixhobo ezichanekileyo/uphando --Ikhaka legraphite lokwambathisa optical, X-ray diffractometer iplatform yesampulu, i-aerospace grade high temperatures resistant structural parts.

IiParameters zobuGcisa

Uluhlu lweParameter	IParameter ethile (Iyunithi)	Uluhlu oluqhelekileyo
Izinto ezingundoqo	Ucoceko lweCarbon (%)	99.92–99.97 (iBanga leMveliso); Mkhulu kuno okanye ulingana no-99.99 (iBanga leSemiconductor)
	Ubuninzi (g/cm³)	1.82–1.94
	Umxholo wothuthu (ppm)	Ngaphantsi okanye ngokulingana nama-200 (iBanga loMzi-mveliso); Ngaphantsi okanye ukulingana nama-80 (iBanga leSemiconductor)
	Ubungakanani besuntswana (μm)	4–12 (Uzinkozo); 12–20 (Uziinkozo oluPhakathi)
Ukusebenza koomatshini	Amandla eFlexural (MPa)	35–60
	Amandla oxinzelelo (MPa)	70–110
	Ukuqina konxweme (HS)	50–75
	I-Elastic Modulus (GPa)	8–12
Ukusebenza kweThermal	I-Thermal Conductivity (W/m·K)	100–180 (Ubushushu beGumbi)
	Ukwandiswa koMsebenzi woThermal (10⁻⁶/ isidanga )	2.8–3.2 (25–800℃)
	Obona bushushu bokusebenza ( isidanga )	1800–2200 (I-Inert Atmosphere); 450–600 (Imekobume yoMoya)
	Ukunyangwa kweThermal Shock ( isidanga )	Enkulu kuno okanye ilingana nama 500 (umahluko wobushushu)
Ukusebenza koMbane	Ukuxhathisa uMqulu (μΩ·m)	7–12
Ukusebenza koMbane	Amandla eDielectric (kV/mm)	Inkulu kuno okanye ilingana no 10
Machining Precision	Ukunyamezelwa koMda-Ubude/Ububanzi (mm)	±0.05 (iBanga eliPhakathi); ±0.01 (iBakala elichanekileyo)
	Ukunyamezelwa koMda - Ukutyeba (mm)	±0.02 (iBanga eliPhakathi); ±0.005 (Ibakala elibonakalayo)
	Ukucaba (mm/m)	Ngaphantsi okanye ilingana no-0.05
	Uburhabaxa boMphezulu (Ra, μm)	0.2–0.8
Ukunyangwa kokusiNgqongileyo	I-Acid Corrosion Mass Loss (%)	Ngaphantsi okanye ilingana no-0.3 (pH 1–3, 1000h)
	Ilahleko ye-Alkali Corrosion Mass (%)	Ngaphantsi okanye ilingana no-0.5 (pH 11–14, 1000h)
	Iqondo lokuXhoxa (g/m²·h)	Ngaphantsi okanye ngokulingana no-0.01 (Imekobume yomoya, i-400 degree)

Iimveliso zixhasa ukwenziwa komntu

Iimpawu zomzimba kunye neekhemikhali

Ukuqhutywa koMbane: Amaphepha egrafite abonisa ukuqhutywa kombane okubalaseleyo, ngenxa yozinzo π- ubume obumaleko obuyilwe ngamafu eeelectron π kunye{1}}nekharbhon covalent bonds. Olu lungelelwaniso lwenza uthutho olululo lwe-electron ngaphakathi kwezinto eziphathekayo, okubangela ukuxhathisa okuphantsi kakhulu kwe-10^ -6 Ω·m. Ngenxa yoko, igraphite isebenza njengento efanelekileyo ye-electrode.
I-Thermal conductivity: Ipleyiti yegraphite nayo ine-conductivity egqwesileyo ye-thermal, i-thermal conductivity yayo iphezulu kunentsimbi, intsimbi, ilothe kunye nezinye izinto zetsimbi. Oku kungenxa yolwakhiwo olunemaleko kunye nesakhiwo sekristale esiyalelwe kakhulu seplate yegraphite, ukuze amandla obushushu adluliselwe ngokufanelekileyo ngokungcangcazela phakathi kweeleya.
Iimpawu zeMechanical: Ipleyiti yegraphite inamandla aphezulu, ukuguquguquka okuphezulu kunye nokumelana nokukrazula. Imodyuli yayo encinci kunye namandla emveliso inokufikelela kwi-TPa eyi-1 kunye ne-130 GPa ngokulandelelana, engaphezulu kwezihlandlo ezininzi zentsimbi. La mandla aphezulu enza ipleyiti yegraphite ibe nozinzo olubalaseleyo kuxinzelelo oluphezulu kunye nokusingqongileyo kobushushu obuphezulu.
Uzinzo lwekhemikhali: Ikhabhoni -ibhondi yekhabhoni yegraphite inamandla amakhulu okudibanisa kunye nokusebenza okuphantsi kweekhemikhali, kwaye inokumelana okuphezulu nemichiza emininzi. Zimbalwa iiasidi kunye neealkali ezinokuyonakalisa, ngoko ke ipleyiti yegraphite isetyenziswa kakhulu kwireactor yeekhemikhali kunye necatalyst carrier.

Ukuchaneka{{0}I-Machined Graphite Plate iye yayinto eyimfuneko kwimveliso ephezulu{1}}ngenxa yokuchaneka kwayo okuphezulu, ukuxhathisa okugqithisileyo kokusingqongileyo kunye nokwenziwa ngokwezifiso okuqinileyo. Ukuze kuqinisekiswe ukusebenza kakuhle, ukucoceka kwegraphite, ubungakanani bamasuntswana, indlela yokucubungula kunye nokuphathwa kwendawo kufuneka kuqwalaselwe ngokubanzi xa ukhetha igraphite.